1994 年 34 巻 5 号 p. 429-434
The crystallization process of amorphous Ti-52at%Al alloy was studied using sputter deposited materials. The crystallization occurred at about 800K accompanying the abrupt drop in an electrical resistivity vs. temperature curve. From changes in X-ray and electron diffraction patterns due to annealing at 800K, the crystallization sequence was represented as
Amorphous(Ti–52at%Al)–α(hcp)–α2(DO19)–γ(L10).
From the analyses of lattice parameter, the crystallization was considered to be an isoconcentrational process. The formation of metastable phases in preference to the stable γ(L10) one was well predicted by the kinetic analysis in terms of relative nucleation rate assuming that the free energy of amorphous phase was lower than that of undercooled liquid by 3.5 kJ/mol.
