NIHON GAZO GAKKAISHI (Journal of the Imaging Society of Japan)
Online ISSN : 1880-4675
Print ISSN : 1344-4425
ISSN-L : 1344-4425
Imaging Today
“Photoelectric Properties of Organic Semiconducting Materials — Materials and Prospects for Organic Light-Emitting Diodes”
Organic Thin-Film Transistors —Fundamentals and Current Status—
Masakazu NAKAMURA
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JOURNAL FREE ACCESS

2006 Volume 45 Issue 1 Pages 40-46

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Abstract

Fundamentals and research trend of organic thin-.lm transistors (OTFTs) are presented. Basic characteristics of a typical TFT are determined by how the carrier accumulates in the semiconducting material of gate/insulator/semiconductor-layered structure. Output current increases as the channel width and carrier mobility increase and channel length decreases. Accordingly, investigation of higher mobility materials and study of simple fabrication technique to obtain higher channel width/length ratio are the major research trends. For the quest of high mobility materials, the progress is currently being saturated and a thorough break-through is desired. When organic semiconductor is used as a TFT under the present circumstances,its performance is about the same as that of amorphous silicon. For the fabrication process, a study in our group is introduced as an example of vertical-type transistors having short channel length.

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© 2006 by The Imaging Society of Japan
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