NIHON GAZO GAKKAISHI (Journal of the Imaging Society of Japan)
Online ISSN : 1880-4675
Print ISSN : 1344-4425
ISSN-L : 1344-4425
Original Paper
A Study of Temperature Dependence of Field-effect Mobility in Solution-processed Organic Field-effect Transistors
Jun OKADATakashi NAGASETakashi KOBAYASHIKazuo TAKIMIYAMasaaki IKEDAHiroyoshi NAITO
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2014 Volume 53 Issue 5 Pages 392-397

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Abstract
Carrier transport in solution-processed organic field-effect transistors (OFETs) based ondioctylbenzothienobenzothiophene (C8-BTBT) has been investigated in a wide temperature range from 300 to 10K. The field-effect mobility shows thermally activated behavior whose activation energy becomes smaller with decreasing temperature. The results indicate thathopping transport between isoenergetic localized states becomes dominated in a low temperature regime. Numerical simulation has been carried out to explain the temperature dependence of the mobility using a hopping transport model based on the effective transport energy concept [V. I. Arkhipov, et al., Appl. Phys. Lett. 82 (2003) 3245]. The numerical calculation is in good agreement with the present experimental results.
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© 2014 by The Imaging Society of Japan
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