抄録
Non-doped hydrogenated amorphous silicon (a-Si: H) films for electrophotographic plates are studied in atmospheres with various gas mixing ratios of argon and hydrogen. The gas mixing ratio is defined using flow rates of argon (RAr) and hydrogen (RH2) respectively:
gas mixing ratio =RH2/RAr+RH2
Charge acceptance voltage per unit film thickness is 20--23 volts for gas mixing ratios of 0. 4 to 0. 8. Over this range, hydrogen content of a-Si: H films is 11 atomic percents.
These films exhibit excellent sensitivity in the visible wavelength range. As, gas mixing ratio increases, the sensitivity in the red wavelength decreases because of an increase in the optical bandgap.
