セレンの電子写真特性におよぽす酸素の影響

抄録

To clarify the effect of oxygen, pure selenium was doped with SeO₂ in the range of oxygen content between 3.5ppm to 1750ppm and the effect of oxygen was studied by the electrophotographic technique and by the time of flight technique. It was found that oxygen has a strong effect on changing the residual potential. The phenomenon can be explained by the change of structural defect density which takes place because of the change of the electrical neutral condition due to the doping of oxygen. From the analysis of the dark decay curve of the residual potential, it was also concluded that oxygen creates shallower levels. The mobilty was not affected by the addition of oxygen but the carrier lifetime was decreased with the increase of the oxygen content. This also shows that oxygen creates shallower localized carrier traps in selenium.