Abstract
The hydrogenated amorphous silicon (a-Si : H) films were prepared at different deposition rates between 1 and 16 μm/h by rf planar magnetron sputtering method with various Ar and H2 gas mixing ratios. The deposition rates were controlled by rf power levels and substrate-target distances. The maximum magnetic fluxes of permanent magnets used for sputtering were 0.0225 T and 0.0425 T at the surface of the target.
The resistivity and hydrogen contents of a-Si : H films decrease monotonically as the deposition rate increases. But, films prepared in the high gas mixing ratio between 0.4 and 0.6 show high resistivity (5×1012 Ω·cm) even though the deposition rate is 12 μm/h.
The maximum value of the electrophotographic sensitivity of a-Si : H films prepared at deposition rates between 1 and 12 μm/h is about 0.15m2/mJ in the visible wavelength range.
