Abstract
A new preparative method for amorphous silicon films, "Chemical Deposition" is proposed, in which silane is decomposed oxidatively to afford the precursors of the film with a chemical reaction of fluorine.
This paper describes general features of the method and properties of the films, i. e., dominating factors of the deposition rate, and the effects of both substrate temperature and the flow ratio of the gases on the chemical structures in the films.
The films show high photoconductivity comparable to those prepared by the rf-glow discharge of silane.
