Residual Image Phenomenon of a-Si:H Photoreceptor and Its Control

Abstract

A residual image phenomenon of hydrogenated amorphous silicon (a-Si:H) photoreceptor has been investigated from analyses of carrier mobility and life time. As the result, it is found that the residual image is occurred by remain of minarity carrier near the photoreceptor surface. Especially, the residual image is apt to occur when a-Si:H photoreceptor is used in the following conditions; (1)a speed of imaging process is high, (2)a light source with long wavelength is used in the exposuring process, (3)a drift mobility of the minarity carrier is less than 10^-2 cm²/V&mdot;s due to boron doping.
The residual image can be reduced by a suitable choice of the wavelength of light source and the doping amount of boron.