1990 Volume 29 Issue 2 Pages 133-137
The Staebler-Wronski effect in a-SiGe:H alloys bas been examined for the highly photoconductive alloys prepared by the microwave-excited plasma CVD method. It was found that the light induced change in photoconductivity depends upon the Ge content in alloys, rather than upon the initial value of the photoconductivity. The light-induced change in photoconductivity decreased with the increase of Ge-content and disappeared in the alloys with equi-molar composition of Si and Ge, irrespective of initial value of the photoconductivity. The above mentioned dependence of the Staebler-Wronski effect upon the alloy composition was not continuous to a-Si:H, and the light-induced change in photoconductivity of the alloys with small amount of Ge was larger than that of a-Si:H. These results suggest the difference of subgap states between a-SiGe: H and a-Si: H.
