Study of the Thin HARP Layer for Solid-state Imagers

Abstract

A thin HARP film for a solid-state imager is discussed. The avalanche multiplication factors of HARP films with thickness of 0.3-0.5μm were simulated, and the 0.4μm film was manufactured. It obtained the avalanche gains of 2 at a target voltage of 60V and 4 at 67V. No deterioration of the spectral response characteristics was observed with thin HARP film, but it was found that the quantum efficiency had to be improved at green and red wavelengths.