抄録
In this paper, we propose a novel electron emission devices, which detect above 5μm Infrared lights. The proposed device is constructed with gated Si field emitters, n-type Si MOSFET and PZT film as a pyroelectric material. The PZT film is connected to gate electrode of the MOSFET, then a current in the MOSFET is controlled by a voltage in the PZT film which is generated by a incidence of a infrared light. The emission current from the emitters is restricted by current flowed in the MOSFET. In this study, we confirmed that the emission current was lineally proportional to the incident infrared light power using an equivalent circuit.
