25-7 電子ビーム蒸着法によるEL素子用Ga_2O_3:Eu薄膜の作製

抄録

Ga_2O_3 thin films were deposited on quartz substrates using Eu-doped GaN by Electron Beam evaporation, then they were annealed at several temperatures for 1 hour in Ar+O_2 flows. It was found that the as-deposited film consists of almost fraction of Gallium metal, and the Ga_2O_3 film is formed by the annealing.