24-3 Fabrication of a-Si:H avalanche multiplication photodiode films on polycrystalline silicon

Abstract

An image sensor with high sensitivity and high pixel density is necessary, but these requirements are opposites. An avalanche multiplication photodiode on Si substrate was confirmed. However, other candidates instead of n-type single crystal silicon (c-Si) are necessary to realize stacked type avalanche multiplication image sensor. In this paper, the candidate is discussed.