Name : 2004 ITE Annual Convention
Location : [in Japanese]
Date : August 25, 2004 - August 27, 2004
A two-dimensional integrated magnetic sensor was designed and fabricated by standard 0.35μm CMOS process. A type of magnetic sensor is Hall sensor using inversion layer under gate oxide of MOSFET. Hall voltage from sensors is read by using the read-out circuit of a CMOS image sensor. Sensor chip was fabricated by ROHM 0.35μm CMOS process. 64x64 Hall sensors are arrayed. Size of "one pixel" is 40 μm^□, and chip size is 4.9mm^〓. From the result, magnet position can be detected by fabricated sensor. The magnetic sensor using the inversion layer of MOSFET is useful for positioning system, but its noise characteristics should be improved.
