12-1 Siウエハの欠陥と熱処理工程時のウエハ過度変形(第12部門 情報センシング2)

抄録

Si wafer defects, produced during insertion/withdrawal into/from furnaces, tend to increase abruptly with increasing diameter of Si wafers. An in-situ observation system is used to quantitatively determine transient deformation of wafers.