14-11 Design and implementation of CMOS image sensor with lock-in pixels using draining only modulation

Abstract

This paper presents a time-resolved CMOS image sensor with lock-in pixels using draining only modulation. Compared with a two stage charge transfer pixel structure, this structure removes the transfer gate between pinned photo diode and pined storage diode, thus realizes trapping-less charge transfer, leading to low-noise and high sensitivity detection.