PROCEEDINGS OF THE ITE ANNUAL CONVENTION
Online ISSN : 2424-2292
Print ISSN : 1343-1846
ISSN-L : 1343-1846
2012
Session ID : 15-2
Conference information

15-2 Dependence of oxide TFT characteristics on semiconductor thickness
Mitsuru NAKATAHiroshi TSUJIHiroto SATOYoshiki NAKAJIMAYoshihide FUJISAKITatsuya TAKEIToshihiro YAMAMOTOHideo FUJIKAKE
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Abstract
We investigated the dependence of InGaZnO (IGZO) thin-film transistor characteristics on IGZO thickness. The ON current was nearly constant with respect to IGZO thickness. The threshold voltage shifted negatively with increasing IGZO thickness because a thicker IGZO film requires a higher negative gate voltage for it to be fully depleted.
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© 2012 The Institute of Image Information and Television Engineers
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