PROCEEDINGS OF THE ITE ANNUAL CONVENTION
Online ISSN : 2424-2292
Print ISSN : 1343-1846
ISSN-L : 1343-1846
2012
Session ID : 15-4
Conference information

15-4 Development of Amorphous IGZO TFT Simulator
Hiroshi TSUJIMitsuru NAKATAHiroto SATOYoshiki NAKAJIMAYoshihide FUJISAKITatsuya TAKEIToshihiro YAMAMOTOHideo FUJIKAKE
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CONFERENCE PROCEEDINGS FREE ACCESS

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Abstract
A new accurate and computationally efficient device simulator for amorphous IGZO TFTs is developed. The simulator takes into account the influence of trap states in the band gap to reproduce the gradual increase of the subthershold current. Calculations using the simulator produce results that are good agreement with measurements over a wide range of gate voltage.
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© 2012 The Institute of Image Information and Television Engineers
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