19-7 Pnpn-4層裏面照射構造を用いた先端科学技術用撮像素子(第19部門[テーマ講演]科学技術のフロンティアを切り拓くイメージセンサ技術)

抄録

Installing functional circuitry on the front side of backside-illuminated image sensors provides image sensors with both high sensitivity and advanced functions. To prevent intrusion of incident light and migration of generated photoelectrons to the functional circuits, a special sensor structure with pnpn layers was developed. Potential applications are briefly discussed.