抄録
We investigated the possibility of a photoconductor using CIGS chalcopyrite semiconductors for solid-state image sensors. CIGS chalcopyrite semiconductors have both a high absorption coefficient and a high quantum efficiency. However, the dark current of them is too high for image sensors. In this study, we proposed a hole-blocking structure using gallium oxide for the CIGS photoconductor. As a result, we could drastically reduced the dark current. Then, the avalanche multiplication phenomenon was observed at an applied voltage of over 6 V.
