抄録
Si-doped zinc oxynitride (ZnON) thin-film transistors (TFTs) were fabricated using co-sputtering of Zn and Si
targets. It was found that Si doping was effective at decreasing the carrier concentration in ZnON films. Furthermore, it was
demonstrated that Si-doped ZnON-TFTs exhibited less negative threshold voltages than those of non-doped ZnON-TFTs.
