PROCEEDINGS OF THE ITE ANNUAL CONVENTION
Online ISSN : 2424-2292
Print ISSN : 1343-1846
ISSN-L : 1343-1846
Proceedings of the ITE Annual Convention 2018
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Charge transfer type pixel using fully depleted SOI substrate
*Syunta NAKANISHIKeita YASUTOMINobukazu TERANISHIShoji KAWAHITO
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CONFERENCE PROCEEDINGS FREE ACCESS

Pages 12C-3-

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Abstract
A fully depleted type SOI pixel image sensor having a thick depletion layer (≧ 150μm) is suitable for x-ray and near infrared sensing. In this research, to reduce reset noise, we studied the pixel structure of a charge transfer type SOI pixel which can store and transfer charges inside a pixel.
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© 2018 The Institute of Image Information and Television Engineers
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