2010 Volume 64 Issue 3 Pages 335-342
We discuss the operation methods for keeping a high S/N ratio at all switching points in multiple exposures and for shorting the total integration time of a wide dynamic range (DR) lateral overflow integration capacitor (LOFIC) CMOS image sensor that combines electric-charge voltage conversions in a pixel and a column capacitor. We have used these methods on a color LOFIC CMOS image sensor. This sensor had a pixel pitch of 5.6-um and the number of effective pixels was 800 (H) x 600 (V). It was made by using 0.18-um 2P3M CMOS technology. Fully linear responses were obtained, as well as a DR of 207 dB. Furthermore, the S/N ratio was 26-dB for the image of 18% gray card at all the switching points between the multiple exposures. The total exposure time was1/13-sec and was obtained by three photoelectric conversion operations at FD and LOFIC capacitors and one photoelectric conversion operation in the column capacitor.
The Proceedings of the Circle of Television Engineers
The Proceedings of the Institute of Television Engineers
The Proceedings of the Institute of Television Engineers
The Institute of Image Information and Televistion Engineers
The Journal of the Institute of Television Engineers of Japan
The Journal of the Institute of Television Engineers of Japan