ホール蓄積型CMOSイメージセンサの開発

藤田 博明; Eric Stevens; 小森 寛文; Hung Doan; Jeffery Kyan; Christopher Parks; Gang Shi; Cristian Tivarus; Jian Wu

doi:10.3169/itej.64.343

A New CMOS Image Sensor Technology Using a Hole-Based Detector

Hiroaki Fujita, Eric Stevens ^†, Hirofumi Komori, Hung Doan ^†, Jeffery Kyan ^†, Christopher Parks ^†, Gang Shi ^†, Cristian Tivarus ^†, Jian Wu ^†

Author information

Hiroaki Fujita
Image Sensor Solutions Eastman Kodak Company
Eric Stevens ^†
Image Sensor Solutions Eastman Kodak Company
Hirofumi Komori
Image Sensor Solutions Eastman Kodak Company
Hung Doan ^†
Image Sensor Solutions Eastman Kodak Company
Jeffery Kyan ^†
Image Sensor Solutions Eastman Kodak Company
Christopher Parks ^†
Image Sensor Solutions Eastman Kodak Company
Gang Shi ^†
MEMC Electronic Materials Inc
Cristian Tivarus ^†
Image Sensor Solutions Eastman Kodak Company
Jian Wu ^†
Image Sensor Solutions Eastman Kodak Company
Author contributions

†These authors contributed equally: Eric Stevens, Hung Doan, Jeffery Kyan, Christopher Parks, Gang Shi, Cristian Tivarus, Jian Wu

Keywords: PMOS

JOURNAL FREE ACCESS

2010 Volume 64 Issue 3 Pages 343-346

DOI https://doi.org/10.3169/itej.64.343

Details

Abstract

A new CMOS image sensor using a hole based detector has been developed. The measurement shows that crosstalk is reduced to one-third and dark current is reduced to a thirtieth that of a standard nMOS device. Red-into-green pixel crosstalk is 7% at 650 nm for a 4.3-μm pixel and dark current as low as 6 pA/cm² at 60°C. Charge capacities of 60, 11 and 4kh+ have been measured for 4.3-, 1.75- and 1.4-μm pixels, respectively.

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