Abstract
A three-layered thin film EL display panel is endowed with inherent memory function when the doping content of Mn exceeds 0.5 wt% and the deposition of an active layer is controlled to a suitable thickness.
In this paper, the following new technique and characteristics of electrical writing and erasing on the above EL panel are described. (1) Basic writing and erasing technique (2) Characteristics of the electrical analog writing by use of the amplitude modulation method or the pulse width modulation method (The result indicate the capability of this panel to display one frame still picture of TV.) (3) Characteristics of the electrical analog erasing and the discussion of erasing mechanism by using simple equivalent circuit presentation of the EL panel (4) Experimental results of graphic and picture display using a matrix type thin film EL panel with 240×180 dot elements