抄録
The problem of pixel voltage shift for TFT-LCDs due to a gate-source capacitance coupling (Cgs) of a-Si TFT becomes more severe in high resolution LCDs. This problem can be moderated through diminishing Cgs using a self-alignment structure. The self-aligned a-Si TFT process can be simplified by using an ion-doping technique to form source/drain contact regions. The mobility of this ion-doped self-aligned a-Si TFT was 0.35 cm2/V·sec and the threshold voltage was 2.3V. The ON/OFF ratio was over 106 in the dark over 105 under 2000 lx light illumination. These characteristics were sufficiently stable under gate stress. The authors have developed 9-inch TFT-LCD panels with this new self-aligned a-Si TFTs. These LCDs show fairly good image. These data show that ion doping technology is very effective for improving 2-Si TFT-LCDs.
