抄録
A single-layer metal-electrode CCD image sensor was studied with the purpose of simplifying the steps in the production process with the aim of achieving low-cost sensors and supplressing smear noise. The inter-electrode gap of the single-layer electrode was decreased to 0.3 micrometer to achieve charge-transfer efficiency of unity. Boron ion-implantation which is self-aligned to the interelectrode gap was introduced to suppress degradation in charge-transfer efficiency. A reduction in the number of process steps needed to fabricate a 1/3-inch-format 360K-pixel interline transfer CCD image sensor was achieved. Vertical resolution was 350 TV lines. Low smear noise of-108dB was obtained.
