The concept of effective density of interface states at a-SiNx : H/a-Si : H interface has been used to analyse the performance of a-Si TFT theoretically, such as field effect, flat band voltage, subthreshold characteristics, as well as experimental research on a-Si TFT. The transfer characteristics of various a-Si TFT and the sub-threshold characteristic parameter S, with different fabrication conditions, have verified the conclusions drawn up from the theoretical analysis in this paper.
