Abstract
We propose a new pixel design for high resolution poly-Si TFT LCD. The proposed pixel element consists of double gate poly-Si TFT and double layer storage capacitor in order to reduce the pixel size without sacrificing the image brightness. The double layer storage capacitor is consisted of two parallel-connected storage capacitor stacked vertically and its capacitance is twice as large as the conventional parallel-plate capacitor with same area. The double gate TFT has two gates at the top and the bottom of the channel and drives twice as large ON-current as the conventional TFTs with same dimension. The leakage current of the double gate TFT is lower than that of the conventional TFT because the channel is fully depleted at OFF-state.
