ITE Technical Report
Online ISSN : 2424-1970
Print ISSN : 1342-6893
ISSN-L : 1342-6893
21.11
Conference information
Pixel Design for TFT-LCD with Double Gate Poly-Si TFT and Double Layer Storage Capacitor
JuhnSuk YooChunHong KimKwonYoung ChoiByungSung BaeMinKoo Han
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CONFERENCE PROCEEDINGS FREE ACCESS

Pages 173-176

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Abstract
We propose a new pixel design for high resolution poly-Si TFT LCD. The proposed pixel element consists of double gate poly-Si TFT and double layer storage capacitor in order to reduce the pixel size without sacrificing the image brightness. The double layer storage capacitor is consisted of two parallel-connected storage capacitor stacked vertically and its capacitance is twice as large as the conventional parallel-plate capacitor with same area. The double gate TFT has two gates at the top and the bottom of the channel and drives twice as large ON-current as the conventional TFTs with same dimension. The leakage current of the double gate TFT is lower than that of the conventional TFT because the channel is fully depleted at OFF-state.
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© 1997 The Institute of Image Information and Television Engineers
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