Abstract
In this paper, gate current characteristics of the single-and double-gate race-track-shaped field emitter structures are reported. The gate current characteristics are calculated by the finite-difference method in Non-Orthogonal Curvilinear Coordinate System and the fourth-order Runge-Kutta method. Numerical simulations show that tum-on voltage of the double-gate structure is reduced by 30% and the ratio of anode current to gate current is increased by 36 times at a gate voltage of 350 V compared to the single-gate structure
