Abstract
The back illumination type photosensitive field emitter was fabricated by depositing p-type a-SiC : H/intrinsic a-Si : H photodiode on the back surface of nongated n-type cone-shaped Si emitters by using plasma CVD methode. The emission current corresponding with illumination intensity was observed and the quantum efficiency of about 0.7. However, the emission current has tendency to be saturated at high illumination level. To expand the dynamic range of the photodetector, the photosensitive field emitter composed of gated field emitter and p-type a-SiC : H/intrinsic a-Si : H photodiode film was demonstrated.
