Abstract
CMOS image sensor whose each unit cell has charge amplifier in it has large fixed pattern noises due to Vth fluctuation of the amplifier transistors. Noise Canceling circuit for CMOS image sensor has been studied, fabricated, and evaluated. The Circuit has successfully suppressed the noise below detectable limit. By this result, is becomes possible that CMOS image sensor is going to overcome CCD image sensor not only in merit of use and production but also in performances. Device technology for buried photodiode is inevitable to establish modified CMOS process. The buried photodiode for CMOS image sensor will be in our hand in much shorter period compared to that for CCD because we have a lot of know-hows to build buried photodiode.
