Abstract
Excimer laser-annealed polycrystaline silicon(poly-Si) films have been investigated. The uniformity of these films was mainly determined by pulse-to-pulse laser energy fluctuations and beam profiles. The native oxide of a-Si films also influenced the surface roughness of poly-Si films. The fluctuation of crystallinity in the threshold region exerts a strong influence on the TFT characteristics. Because the crystallinity of laser-annealed poly-Si has a narrow threshold energy region, the improvement of the uniformity of the TFT characteristics is needed more exact control of crystallization parameters.
