ITE Technical Report
Online ISSN : 2424-1970
Print ISSN : 1342-6893
ISSN-L : 1342-6893
22.37
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Structure of Sputtered Zn-Ga-O Thin Films and Evaluation of Low Voltage Electron Beam Excitement Luminescence
H. IsogaiY. YoshidaH. HayashibeH. Yamamoto
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Pages 25-30

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Abstract
The purpose of this work is to obtain phosphor thin films of low voltage electron beam excitement of highly efficient light emission and long lives for Field Emission Display (FED). We constructed a new type of a vacuum system in which sputtering preparations of Zn-Ga-O films and in-sltu evaluations of low voltage electron beam excitement luminescence can be performed. An emission of greenish blue light was observed in the film which was deposited on about 500℃ substrates from a ZnGa2O4 target. The emission spectrum of the film was similar to that of a ZnO phosphor. The obtained films were amorphous and have characteristic modulations of the composition to the direction of the film thickness. In the film the surface layer was Zn-rich and under layers were Ga-rich.
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© 1998 The Institute of Image Information and Television Engineers
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