Abstract
This paper reports thin-film electroluminescent (TFEL) devices using a binary compound phosphor such as Ga_2O_3. EL characteristics of TFEL devices with a Mn-, Cr-, or Eu-activated Ga_2O_3 phosphor thin-film emitting layer, prepared by rf magnetron sputtering or dip coating, have been investigated. Ga_2O_3 : Mn, Ga_2O_3 : Cr and Ga_2O_3 : EU TFEL devices produced luminances of 1018 cd/m^2 in green, 270 and 27 cd/m^2 in red emissions, respectively, when driven at 1kHz. It can be concluded that a new oxide phosphor using Ga_2O_3 as the host material are very promising as the emitting layer for TFEL devices.
