Abstract
Fabrication process of self-aligned organic EL devices with side-wall structure have been investigated. Principal point of the process is the formation of side-wall structure using reactive ion etching. Cathode was used as a mask for self-alignment and the insulating side-wall structure was formed around periphery of the device. The device characteristics was measured after side-wall fabrication. Emission was observed above 3.5V and was 1000cd/m^2 at 100mA/cm^2. After the side-wall process, wet-and photolithographic-processes could be applied. The emission have been also confirmed after final fabrication process.
