Abstract
High Concentration p-type doping of ZnSe was carried out by dopant diffusion using excimer laser radiation. The Na doped p-type ZnSe was formed by excimer laser pulse to the sample surface after deposition of Na_2Se for dopant source on ZnSe surface. We have reported that low resistivity ZnSe layer (holl concentration : 5×10^<19>cm^<-3> mobility : 8.1cmV^<-1>S^<-1>) and ohmic contact between Na doped ZnSe and gold electrode were obtained by laser doping with 550℃, 10min of thermal annealing in a furnace. The Na doping was also observed without thermal annealing and the ZnSe diode prepared by this method could be injected about 80Acm-2 of current. It was found that 1500K of temperature increment at sample surface by excimer laser radiation from result of computer simulation.
