Abstract
SiC thin films were deposited by plasma CVD and remote plasma CVD method using hexamethyledisilane. It was found that the adhesibility of SiC thin film on the plastic substrate increases with the surface energy of the substrate which, in turn, can be increased by the Oxygen plasma treatment. Deposition rate was higher for the films deposited at room temperature using 50W rf power in plasma CVD method with a pressure of 1.0 Torr. The deposited films were useful for rejecting UV radiation.
