Abstract
Effect of deposition temperature of monochamber PECVD processing on a-Si TFT electrical characteristics and stability has been investigated. The experimental results show that 1)TFTs deposited at 280℃ have higher mobility than the TFTs deposited with other temperature ; 2)TFTs deposited with higher temperature have better stability against voltage stressing. When we deposited SiN_x/a-Si/n+a-Si films by monochamber PECVD processing at 280℃, a-Si:H TFTs have higher mobility and better capability against voltage stressing.
