Abstract
Effect of parasitic resistance (Rp) on the mobility in laser-crystallized low-temperature (LT) poly-Si thin film transistors (TFTs) of various channel lengths was investigated. The minimum off current at Vd=10V in these TFTs is scaleable and is about 0.15 pA/μm. Significant reduction of mobility was observed in short channel devices due to parasitic resistance. Based on our analysis of the Rp requirement for high-performance short-channel LT poly-Si TFTs, to avoid significant degradation in the mobility for the mobility larger than 300 cm^2/Vs, it's necessary to keep Rp below 200 ohm.
