Abstract
In sputtering apparatus using electron-cyclotron-resonance microwave plasma, microwave power was focused to achieve high quahty Co-Cr-Ta/Ti perpendicular magnetic recording disk. Plasma density, deposition rate and quantity of Ar ion irradiation during film deposition were increased with increasing microwave power. A perpendicular magnetic disk with fine grains exhibiting superior magnetic and recording performance was fabricated at high average deposition rate by controlling microwave power, that is, microwave was changed from high power to low power during Co-Cr-Ta film deposition.
