ZnO:Zn phosphor thin films have been prepared by PLD(Pulsed Laser Deposition)technique. Optical emission spectroscopy of the laser produced plume was used to characterize the deposition process. All deposited films are oriented to the c-axis of wurtzite ZnO crystal. The film , which shows efficient green PL emission, was prepared by controlling the substrate temperature around 250 ℃. At the present, it is difficult to control the oxygen vacancy concentration using post-annealing of the deposited films and also preparing the films with assisted reactive gasses. The emission ratio of O(777nm)/Zn(635nm)is related to the green PL intensity of the deposited films. By the monitoring these emission lines, deposition parameters such as laser nuence and targetsubstrate distance will be optimized to obtain an efficient ZnO:Zn phosphor thin film.
