ITE Technical Report
Online ISSN : 2424-1970
Print ISSN : 1342-6893
ISSN-L : 1342-6893
24.6
Session ID : IDY2000-6
Conference information
EL characteristics of Multicolor-Emitting TFEL Devices Using Dip-coated Ga2O3 Phosphor Thin-Films
Toshikuni NAKATANITetsuya SHIRAIToshihiro MIYATATadatsugu MINAMI
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Abstract
Multicolor-emitting TFEL devices with a transition metal- or rare earth-. activated Ga2O3 phosphor thin-film emitting layer and a thick BaTiO3 Ceramic sheet insulating layer have been fabricated. The thin-film emitting layer was prepared by dip-coating process which are easy to handle. The luminances of multicolor emissions were obtained in transition metal- (Cr, Co, Mn or Sn) activated Ga2O3 phosphor TFEL devices and rare earth- (Sm, Nd, Eu, Dy, Er, Ho, Ce, Pr)activated Ga2O3 phosphor TFEL devices. Besides, high luminances of 1018 cd/m^2 for green emission and 375 or 309 cd/m^2 for red emission were obtained in Ga2O3:Mn and Ga2O3:Cr or Ga2O3:Eu TFEL devices driven at l kHz.
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© 2000 The Institute of Image Information and Television Engineers
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