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Displaying 1-27 of 27 articles from this issue
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Article type: Cover
Pages Cover1-
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (13K) -
Article type: Index
Pages Toc1-
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (113K) -
H. Kakumoto, S. Naka, H. Okada, H. Onnagawa, S. Fukumoto, H. Yamamoto, ...Article type: Article
Session ID: IDY2000-1
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSCircuit simulation program of the matrix-addressed organic electroluminescent(EL)devices, called "EL-SPICE", has been developed and transient analysis of the matrix panel has been carried out. As a result of increase an ITO electrode resistance, delay of response time, decreases of actual applied voltage and of luminance were remarkable. Assuming highly efficient organic EL device and higher ITO electrode resistancc, it is observed that there is a possibility of unacceptable emission for non-selecting point. For improving the uniformity in large-area simple matrix-addressed panel, reduction of the ITO electrode resistance is the key subject.View full abstractDownload PDF (477K) -
Akiyoshi Mikami, Takahiro Ishikawa, Naoki YamamuraArticle type: Article
Session ID: IDY2000-2
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSIn order to develop an optical analysis tool for multi-layer thin-film structure including an self-emitting layer, we have propose an four-division analytical model combined with multiple reflection of internal emission and the calculation of characteristic matrix in passive thin-film stack. The model is applied to the white light emitting electroluminescent(EL)devices with broad-band phosphors of ZnS:Mn and SrS:Ce, especially to the investigation of the relationship between the luminescence properties and the optical constants of insulating layer material. The experimental results are as follows. (1)About 50 percentage of energy loss is originated in the propagation process from phosphor to adjacent insulating layer. (2)Optical loss is mainly caused by the front insulating layer than the rear one. For example, outcoupling efficiency will be improved by a factor of 20 to 30 percentages by optimizing the front insulator in case of SiO_2 insulator. (3)It is further clarified that Si3_N_4 insulator is suitable for obtaining the stable EL characteristics in terms of thickness fluctuation and viewing angle dependence. From these results, we propose a new insulating layer consisting of Si_3N_4 and SiO_2, Which has a continuos and sinusoidal variation in refractive index throughout the insulating layer.View full abstractDownload PDF (1026K) -
Tokihiko OGI, Noboru MIURA, Hironaga MATSUMOTO, Ryoutaro NAKANOArticle type: Article
Session ID: IDY2000-3
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSIn the EL device with the double-insulating-layer structure, It was investigated whether ZnS buffer layer acted as a career injection layer for emission layer. TFEL devices used with Al^<3+> CU^<1+> and Li^<1+> doped ZnS buffer layer were fabricated. Transient characteristics were also measured for unsymetrical structure. From these results, it is considered that the impurities doped ZnS buffer layer acts as the career injection layer, and luminance was increased due to the injection career from buffer layer.View full abstractDownload PDF (514K) -
Mitsuhiro Kawanishi, Noboru Miura, Hironaga Matsumoto, Ryotaro NakanoArticle type: Article
Session ID: IDY2000-4
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSBlue emitting thin-film electroluminescence(TFEL)devices which have been satisfied with the requirement for full color TFEL displays were obtained. Eu^<2+> doped BaAl_2S_4 thin films were used for Emission layer. BaAl_2S_4:Eu thin-films were prepared by the two targets pulse-electron-beam evaporation to be suitable for the deposition of multinary compounds which have been difficult to obtain stoichiometoric thin-films. The EL spectrum had a peak around 470nm. The Commission Interantionale de l'Eclairage(CIE)color coordinates were x=0.12 and y=0.10. The luminance under the 50Hz pulse voltage was 65cd/m^2.View full abstractDownload PDF (570K) -
Ichiro Yamamoto, Shigeki Naka, Hiroyuki Okada, Hiroyoshi OnnagawaArticle type: Article
Session ID: IDY2000-5
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSCesium alloys that are used as a phototube electrode and show low work function have been inverstigated. In this investigation, cesium alloy are used as cathode metal of organic electroluminesent(EL)devices. ITO/triphenylamine derivative(TPD)/aluminum complex(Alq_3)/Cs_2O/Al device achieved the brightness of 1500cd/m^2 at 100mA/cm^2 and 6.4V. This characteristics is similar to that of the organic EL devices with AlLi cathode. As a result of analysis based on Schottky emission, barrier height obtained was 0.39eV for electron injection from Cs_2O/Al electrode into Alq_3 layer.View full abstractDownload PDF (449K) -
Toshikuni NAKATANI, Tetsuya SHIRAI, Toshihiro MIYATA, Tadatsugu MINAMIArticle type: Article
Session ID: IDY2000-6
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSMulticolor-emitting TFEL devices with a transition metal- or rare earth-. activated Ga2O3 phosphor thin-film emitting layer and a thick BaTiO3 Ceramic sheet insulating layer have been fabricated. The thin-film emitting layer was prepared by dip-coating process which are easy to handle. The luminances of multicolor emissions were obtained in transition metal- (Cr, Co, Mn or Sn) activated Ga2O3 phosphor TFEL devices and rare earth- (Sm, Nd, Eu, Dy, Er, Ho, Ce, Pr)activated Ga2O3 phosphor TFEL devices. Besides, high luminances of 1018 cd/m^2 for green emission and 375 or 309 cd/m^2 for red emission were obtained in Ga2O3:Mn and Ga2O3:Cr or Ga2O3:Eu TFEL devices driven at l kHz.View full abstractDownload PDF (725K) -
Toshihiro MIYATA, Toshikuni MAKATANI, Akiyoshi MIKAMI, Tadatsugu MINAM ...Article type: Article
Session ID: IDY2000-7
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSThe EL performance of high frequency driven oxide phosphor TFEL devices using a thick BaTiO_3 ceramic sheet insulator have been demonstrated. The EL characteristics such as Iuminance, threshold voltage and luminance increase in relation to applied voltage under sinusoidal wave voltage driving were considerably improved by increasing frequency from 60Hz to 10kHz, whereas they remained relatively unchanged when driven by pulse wave voltages. The improvement of L-V characteristics can be explained by considering the dielectric relaxation time of the individual emitting layer and insulating layer. Luminaces above 1000 cd/m^2 for green emission was obtained in Ga2O3:Mn and ZnGa2O4:Mn TFEL devices. driven with a voltaqe below 120V at 10kHz.View full abstractDownload PDF (752K) -
Toshikuni NAKATANI, Shingo SUZUKI, Toshihiro MIYATA, Tadatsugu MINAMIArticle type: Article
Session ID: IDY2000-8
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSThe stability of various oxide phosphors used as the emitting layer in high-frequency driven TFEL devices is reported. Thick ceramic-insulating-layer-type TFEL devices with a Zn_2Si_xGe_<1-X>O_4:Mn or Ga_2O_3:Mn thin-film emitting layer were life-tested under 10 kHz sinusoidal wave voltage driving. An unsealed Ga_2O_3:Mn TFEL device exhibited long term stable operation of more than 10000 hours at room temperature in the atmosphere.View full abstractDownload PDF (666K) -
Toshihiko Fujiwara, Ryu Ohsawa, Haruki Fukada, Koutoku Ohmi, Shosaku T ...Article type: Article
Session ID: IDY2000-9
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSTo improve a luminescent efficiency of a blue SrS:Cu, Ag EL phosphor, a dependence of Cu concentration and post:deposition annealing on crystallographic and photoluminescent(PL)characteristics have been investigated for SrS:Cu thin alms prepared by hot-wall deposition using successive source supply. As-deposited SrS:Cu thin films show a blue PL emission peaking at 472 nm. The PL intensity is increased with increasing Cu concentration with keeping the same PL spectrum. The PL intensity is further increased by about 6 times by annealing at 900 ℃ for 10 min, and the peak is also shifted to longer wavelength by 15 nm. It is thought that the annealing gives rise to Cu diffusion into SrS lattice rather than the improvement of the crystallinity.View full abstractDownload PDF (363K) -
Yuichi Sato, Susumu SatoArticle type: Article
Session ID: IDY2000-10
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSOptical emission properties of the novel fun-color flat-panel-display using a GaN micro UV-LED array are investigated by the Monte Carlo simulation, and device structures of the display that realize high resolution and high brightness are discussed. Phosphor particles having their diameters from 4 to 6μm are randomly arranged to form a phosphor film, and a GaN micro UV-LED as an excitation source is adhered to the front-Bide of the film. Transparent GaN UV-LEDs enable to utilize fluorescent light emitted from the front-Bide of the phosphor film of which intensity is about two times larger than that emitted from the backside. In addition, the front-side light concentrates in a small area whereas the backside light is widely dispersed. Dependencies of the properties on other parameters such as film thickness and LED areas are also discussed.View full abstractDownload PDF (700K) -
Toyonori Kusuhara, Toru Aoki, Yoshinori Hatanaka, David C. LookArticle type: Article
Session ID: IDY2000-11
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSFabrication of p-type ZnO layer on a single crystal ZnO substrate was carried out using Zn_3P_2 as a dopant source by excimer laser radiation. It was found with PL measurement that, under high-pressure oxygen atmosphere, it is able to avoid to form oxygen vacancies which was caused by excimer laser radiation on the ZnO surface. Moreover, the diode I-V characteristics were obtained when p-type ZnO layer was formed on low resistivity n-type ZnO substrate, and white-violet colour emission was observed by current injection under 110 K. This emission spectrum included a peak around 370 nm wavelength attributed to band edge emission.View full abstractDownload PDF (594K) -
A. Miyake, H. Kominami, H. Tatsuoka, H. Kuwabara, Y. Nakanishi, Y. Hat ...Article type: Article
Session ID: IDY2000-12
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSThe growth of ZnO thin films which whow exciton emission has bean tried on Si(111)substrate using an epitaxial of ZnS buffer layer. The ZnO films showed c-axis orientation and their crystallinity was improved by annealing. The epitaxial ZnO films was successfully grown with the orientation of(0002), [1120]ZnO//(1 1 1 ), [110]ZnS//(111), [110]Si(111)at a substrate temperature of 400℃ or more. The films which were annealed at loot showed the exciton emission at 3.35eV by exciting at 325 nm of He-Cd laser. On the other hand, the film showed a broad emission with a peak at around 2.2eV at rum temperature.View full abstractDownload PDF (1399K) -
T. Urakabe, T. Hashimoto, A. Iwata, A. Ito, H. Arimoto, I. MakitaArticle type: Article
Session ID: IDY2000-13
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSWe have developed a display device, whose many cells are fabricated together in a single glass sheet, for large area full-tor flat screens. The device utilizes Xe dielectric barrier discharge like a PDP. The 64-inch size display system composed of the devices with 10mm pixel-pitch was shown in IDW'99. The display device with 6mm pixel-pitch is described in this paper. First, This paper says about structure of the device and the driving methcd. Secondly, the Characteristics are described and the paper shows that the luminance wes 800 cd/m^2 and the effiacy was 2 Im/W. Finally, it says about the driving way of the low voltage addressing. The addressing voltage decreased to 25V due to the driving way.View full abstractDownload PDF (815K) -
Toshihiro Yoshioka, Akifumi Okigawa, Kaoru TokiArticle type: Article
Session ID: IDY2000-14
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSXe 147 nm resonance and Xe_2 excimer emissions are mainly employed to excite phosphors in PDP cells. Because the discharge gas filled in the cell strongly absorbs the resonance, radiation trapping has influences on PDP characteristics. In this report, we try to estimate a percentage of resonance photons that arrive at the phosphors and an effective imprisonment time of Xe(ls_4)initial state of resonance by use of modified 3-dimensional model based on 1-dimensional imprisonment simulation. As results for conventional cell structure and gas mixture, only about 40 % resonance reaches the phosphors. The imprisonment time combining with an absolute density profile of Xe(ls_4)by Laser Absorption Spectroscopy could expect the resonance yield of 1.5 x 10^8 [photon/pulse] in a cell.View full abstractDownload PDF (769K) -
Cell Structure Design with Consideration of Luminance and Voltage Margin in Surface Discharge AC-PDPShigeki Harada, Akihiko IwataArticle type: Article
Session ID: IDY2000-15
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSIn surface discharge AC-PDP, the sustain electrodes that consist of transparent electrodes and bus electrodes, strongly affect luminance and voltage margin. . The relationships between the sustain electrodes breadth and luminance, voltage margin, circuit cost are important especially in designs of large PDPs, but that relationships have not been clear. In this paper, we will make this relationships clear and propose a method of design of cell structure.View full abstractDownload PDF (738K) -
K. Hagiwara, M. Ushirozawa, H.S. Jeong, Y. TakanoArticle type: Article
Session ID: IDY2000-16
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSIn order to analyze the discharge phenomena in surface-discharge AC-PDP cell, spatio-temporal variations of emission lines were observed through the transparent barrier ribs with high-speed CCD camera. We made the qualitative analysis of the electron energy distribution and the electron density distribution with the comparison between the observed results of 823nm and 828nm emission from Xe and that of orange visible emission from Ne. And we examined the effects of the total gas pressure and the variation in the arrangement of the electrodes on the emission region of 828nm. In the case of 100μm and 200μm rib height, the thickness of discharge are similar each other. As the driving voltage increases, the thickness of discharge doesn't much change. These results will help us to verify the 2-D discharge simulations and improve the luminous efficiency of PDPs.View full abstractDownload PDF (1218K) -
H. Taniguchi, T. Komaki, K. Amemiya, H. Nakamura, T. Tokunaga, M. Suzu ...Article type: Article
Session ID: IDY2000-17
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSWe have developed a new cell structure and a new driving method for further improvement of 50-inch XGA-type wide PDPs picture quality. Luminous efficiency, bright room contrast ratio and vertical resolution were improved by adopting "waffle-structured" barrier ribs and black strips. High dark room contrast ratio and overcoming dynamic false contour were achieved by adopting new driving method "CLEAR". "PDP-502HD" released in July 1999 exhibited a high contrast ratio of 560:1 and a high peak luminance of 560 cd/m^2 with these technologies.View full abstractDownload PDF (979K) -
Yuichi IKEDA, Keizo SUZUKI, Hideshi FUKUMOTO, Masayuki SHIBATA, Masaji ...Article type: Article
Session ID: IDY2000-18
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESS -
Tomoaki Nakamura, Wataru Sakamoto, Toshinobu Yogo, Yutaka Hotta, Makik ...Article type: Article
Session ID: IDY2000-19
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSIn order to reduce the cost of AC-PDP, we studied the fabrication process of the protective layer for the AC-PDP by aqueous chemical solution deposition method. We have already reported the organic solvent process using Mg-metal, 2-methoxyethanol, alcohol, and organic additives. Newly developed process is based on the aqueous system, in which magnesium acetate and organic additives were selected as starting materials. A MgO layer was prepared by spin coating and firing at 500 ℃ in air. The MgO layer showed high transmittance(>90%). The evaluation of discharge properties indicated that the MgO layer thus prepared had a similar performance to that using the organic solvents.View full abstractDownload PDF (1097K) -
T. Hirakawa, H. Uchiike, T. Ichinose, J. Kimura, Y. IdeArticle type: Article
Session ID: IDY2000-20
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSIt is pointed out that the increase of utilization of Vacuum Ultraviolet Rays(VUV)is one of the best methods to improve the luminous efficiency of color ac plasma displays. In order to achieve high efficiency of utilizing VUV, it is very important for us to research and develop the protecting materials whose property is transparent for VUV. In the present work, after target materials for vacuum evaporation were calcinated by varying the contents of MgAl_2O_4, the secondary electron emission characteristics, γ1 characteristics of the evaporated samples were measured.View full abstractDownload PDF (892K) -
M. Shiiki, C. Okazaki, S. Iwanaga, T. Furukawa, T. SuzukiArticle type: Article
Session ID: IDY2000-21
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSThermal luminance degradation of PDP phosphors has been investigated in a baking process for the manufacture of plasma display panels. The degradation behavior of the blue-emitting BaMgAl_<10>O_<17>:Eu^<2+> phosphor paste is similar to that of powder phosphor after baking in deoxidized atmosphere(in 100%N2 flow)and shows the remarkable reduction of the efficiency in 140-200nm wavelength region. It is probable that the cause of the thermal deterioration of blue phosphor paste is the formation of deep traps in phosphor particles by the deoxidization.View full abstractDownload PDF (633K) -
Shinji Tadaki, Manabu Ishimoto, Nobuhiro Iwase, Shinya FukutaArticle type: Article
Session ID: IDY2000-22
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSIt is characteristic of BaMgAl_<10>O_<17>: Eu^<2+> phosphor, which is used to emit blue lights for PDPs, that it is deteriorated by not only sputtering but also vacuum ultraviolet irradiation accompanying gas discharges in the panel operation. The surface phases deteriorated by X-ray or vacuum ultraviolet irradiation were observed down to the atomic level by means of TEM.View full abstractDownload PDF (824K) -
Mizumoto USHIROZAWAArticle type: Article
Session ID: IDY2000-23
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSIn order to improve the luminance and efficiency of PDP, luminance degradation of blueemitting phosphor BaMgAl_<10>O_17:Eu caused by panel making process was investigated with samples prepared by different processes. The least changed sample maintained 83% luminance after the process. Excitation spectra indicate that the degree of the degradation at 147nm excitation was different from that at 254nm. Chemical analyses indicated that the degradation was caused by the change of surface divalent Eu activator to trivalent. Carbon contamination, which was expected to be a cause of the degradation, was not observed on any samples.View full abstractDownload PDF (612K) -
C. Okazaki, M. Shiiki, T. SuzukiArticle type: Article
Session ID: IDY2000-24
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSWe studied the luminance saturation behavior of five types phosphors for plasna display panel(PDP)under excitation by an ArF laser(wavelength: 193 nm, pulse width:25 ns, and frequency : 10 Hz). The relationships between luminance intensity and excitation energy density show that all the phosphors exhibit luminance saturation above an excitation energy density level of 0.2 mJ/cm^2 pulse.View full abstractDownload PDF (527K) -
Article type: Appendix
Pages App1-
Published: January 27, 2000
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (82K)
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