Abstract
The stability of various oxide phosphors used as the emitting layer in high-frequency driven TFEL devices is reported. Thick ceramic-insulating-layer-type TFEL devices with a Zn_2Si_xGe_<1-X>O_4:Mn or Ga_2O_3:Mn thin-film emitting layer were life-tested under 10 kHz sinusoidal wave voltage driving. An unsealed Ga_2O_3:Mn TFEL device exhibited long term stable operation of more than 10000 hours at room temperature in the atmosphere.
