Abstract
Fabrication of p-type ZnO layer on a single crystal ZnO substrate was carried out using Zn_3P_2 as a dopant source by excimer laser radiation. It was found with PL measurement that, under high-pressure oxygen atmosphere, it is able to avoid to form oxygen vacancies which was caused by excimer laser radiation on the ZnO surface. Moreover, the diode I-V characteristics were obtained when p-type ZnO layer was formed on low resistivity n-type ZnO substrate, and white-violet colour emission was observed by current injection under 110 K. This emission spectrum included a peak around 370 nm wavelength attributed to band edge emission.
