Abstract
The electroluminescent characteristics of TFEL devices using(Al_2O_3-Ga_2O_3):Mn thin films prepared process or r.f.magnetron sputtering are described. Green emitting TFEL devices using(Al_2O_3-Ga_2O_3):Mn thin films prepared with an Al_2O_3 content of 0 to 30 mol.% exhibited luminances above 1000 cd/m^2 when driven by a sinusoidal wave voltage at 1kHz. Luminances of 1557 and 1660cd/m^2 were obtained in TFEL devices using(Al_2O_3-Ga_2O_3):Mn thin films prepared with an Al_2O_3 content of 30 mol.% by the sol-gel process and an Al_2O_3 content of 20 mol.% by magnetro sputtering, respectibely. A maximaum luminous efficiency above 0.4 lm/W was obtained in these TFEL devices when driven at 1kHz.
