Abstract
We have fabricated hybrid organic light emitting transistors (OLET) combining static induction transistor (SIT) with organic electroluminescence (EL) and examined their optical properties as a display device. Current-voltage and luminance-voltage characteristics were measured in 'normal' and 'inversed' structures. Although EL intensity of inversed device is lower than the normal one, the light shadowing problem by the Al gate electrode was avoided. Improvement of the device characteristics in the inversed hybrid OLET is expected by optimizing the gate electrode, organic layer, etc.
