1.5M Pixels Imager with Localized Hole Modulation Method 4.2μm Pixel Size and 1.5M Pixels New Image Sensor with charge-modulation method using Hole Charge in the bulk.

Abstract

A 1.5M pixels imager with 4.2μm square pixels is composed of a single MOSFET and a buried photodiode. This device uses single-poly triple-metal 0.35μm CMOS technology with 6 extra photo masks added to the conventional CMOS mask process. A localized high-density p-region near the source of MOSFET converts the accumulated hole number to source voltage. We call this high-density p-region "Hole Pocket" and this device VMIS(Threshold Voltage Modulation Image Sensor). The low random noise, low dark signal, high sensitivity with good color reproduction and resolution is achieved by this technology.