Abstract
, , ,In this paper, a new CCD register is proposed to improve some disadvantages of the Full-Flame scheme CCD image sensors. The cell of the register is inverted version of the conventional photo-diode with overflow drain. Then, the register is suitable for back illumination. The leakage current between electrodes and electrode to channel could be reduced to a negligible level by adjusting barrier height. Also, the dark current generated at Si-SiO_2 the interface has proved to flow into electrodes to minimize dark current. The transfer inefficiency for 7×10^4 signal electrons, that is decided by anti-blooming function of the cell, was as low as 10^<-11> within 8ns transfer period for pushing pulse with 4ns fall time. The new CCD register driven by four phase drive pulses could handle several times larger amount of charge than the two phase CCD using hole pinning mode.
